Dephasing in open quantum dots

Dephasing in Open Quantum Dots

Shape-averaged magnetoconductance (weak localization) is used for the first time to obtain the electron phase coherence time tf in open ballistic GaAs quantum dots. Values for tf in the range of temperature T from 0.34 to 4 K are found to be independent of dot area, and are not consistent with the tf ~ T22 behavior expected for isolated dots. Surprisingly, tfsT d agrees quantitatively with the ...

Theory of dephasing by external perturbation in open quantum dots

The anomalous magnetoresistance of bulk disordered systems is governed by weak localization ~WL!. Being an interference phenomenon, it is extremely sensitive to inelastic processes commonly referred to as dephasing. Recently, another object for the study of quantum effects appeared—ballistic quantum dots. In the absence of inelastic processes, the transport properties of the dots are well descr...

Dephasing in InAs/GaAs quantum dots

Ultralong dephasing time in InGaAs quantum dots.

We measure a dephasing time of several hundred picoseconds at low temperature in the ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-aco...

Size dependence of electron spin dephasing in InGaAs quantum dots